目的 探讨基片偏压对镁合金 Ti/ TiN 膜层质量的影响。 方法 利用多弧离子镀技术,在不同偏压条件下,对镁合金先镀 Ti 再镀 TiN,通过 SEM ?炷げ阈蚊?通过划?舛せ岷闲阅?通过电化学工作站对比 AZ31 镁合金与不同偏压镀膜试样的耐蚀性。 结果 偏压为 200 V 时,TiN 膜层致密均匀且成膜速度快,膜层耐蚀性最好;偏压为 200 V 时,基体结合最好且膜层较厚,有较好的耐蚀性。 结论 镀Ti 膜时的偏压对随后镀 TiN 的质量有着显著的影响,以 200 V 偏压的工艺镀 TiN 膜层质量最好,膜层致密,成膜速度快,耐蚀性优良。

Objective To explore the effect of substrate bias on the quality of Ti/ TiN film. Methods Making use of the technology of multi-arc ion plating, magnesium alloy was plated with Ti followed by TiN plating under different bias voltage. The morphology of films was observed by SEM, the adhesion of the film with substrate was investigated by scratch tester, and the corrosion resistance of film samples plated with different bias was compared to that of AZ31 magnesium alloy through electrochemical working station. Results When the bias voltage was 200 V, the TiN film was uniform and compact, the velocity of film formation was quick, and the corrosion resistance of the film was the best. When the bias voltage was 200 V, the film had the strongest bonding with the substrate and considerable thickness, besides, the corrosion resistance was relatively high. Conclusion Bias voltage during Ti plating of film had significant impact on the quality of the subsequent TiN plating, and the coating quality was the best when the bias voltage was 200 V, the resulting film was compact, the velocity of film formation was fast, and the film had excellent corrosion resistance.