目的 结合金属辅助化学湿法刻蚀原理,在单晶硅表面制备高效减反的微纳米结构。 方法 以单晶硅为基体,提出用 Cu²⁺作为催化剂,在单晶硅表面两步化学刻蚀出多种微纳米减反结构,运用 SEM /AFM 表面分析方法,对形成的表面形貌和制备工艺进行分析,详细介绍了铜离子催化作用下制备微纳米结构的机理、反应现象及主要影响因素。 结果 铜离子催化化学刻蚀单晶硅可以得到均匀分布的微纳米减反结构,所得结构在 250 ~ 800 nm 范围内的反射率达 5% 以下。 结论 与传统碱性刻蚀技术相比,该技术所得微结构具有更高的光吸收率,并且稳定性好,容易控制。

Objective To prepare micro / nano structure on silicon substrate combining with the mechanism of metal-assisted chemical etching in silicon. Methods Various micro-nano structures were prepared with Cu²⁺ catalysis using monocrystalline silicon as sample substrate. And the formation mechanism of micro / nano structures, the reaction phenomenon and the main influencing factors were studied. The resulted microstructure, and surface morphology were revealed by scanning electron microscope and atomic force microscope. Results The reflectivity of the structure was less than 5% from 250 nm to 800 nm characterized by ultraviolet spectrophotometer. Conclusion Cu²⁺ catalytic etching monocrystalline silicon could be used as a potential technology for silicon texture formation because of the lower reflectance and easier handling compared with traditional alkine etching.