概述了化学机械抛光作用机制,着重阐述了 3 种常见衬底( α-Al₂O₃,SiC,Si ) 的化学机械抛光现状,主要从抛光工艺参数和抛光液组成( 不同磨料、磨料粒径、氧化剂、络合剂、pH 值等) 对晶片抛光效果的影响展开研究,并指出了目前化学机械抛光存在的问题,进一步展望了 LED 衬底化学机械抛光的发展前景。

In this paper, the mechanism of chemical mechanical polishing ( CMP ) was summarized. The development of chemical mechanical polishing of three kinds of substrates ( α-Al₂O₃, SiC, Si) were introduced. The study was mainly focused on the effects of the polishing process parameters and the composition of the polishing slurry ( different abrasive, abrasive particle size, oxidizing agent, chelating agent and pH value, etc) on wafer polishing, and the existing problems of CMP were pointed out. Finally,the future prospect of CMP of LED substrate was outlined.