采用射频等离子体增强化学气相沉积法,制备了掺硼和掺磷的氢化纳米硅薄膜( nc-Si : H) ,并将其应用于纳米硅薄膜类叠层太阳电池中。 分析了薄膜样品的光学性能及表面形貌,结果表明:P 型掺硼纳米硅薄膜的光学带隙为 2 . 189 eV,电导率为 8 . 01 S / cm,霍尔迁移率为 0 . 521 cm²/ ( V·S) ,载流子浓度为 9 . 61 X10¹⁹/cm³;N 型掺磷纳米硅薄膜的光学带隙为 1 . 994 eV,电导率为 1 . 93 S / cm,霍尔迁移率为 1 . 694 cm²/ ( V·S) ,载流子浓度为 7 . 113 X10¹⁸/ cm³;两者的晶粒尺寸都在 3 ~ 5 nm 之间,晶态比都在 35% ~ 45% 之间,并且颗粒沉积紧密,大小比较均匀。 制备了大小为 20 mm X 20 mm,结构为 Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H /i-nc-Si : H / n-c-Si / Al 背电极的纳米硅薄膜类叠层太阳电池,通过 I-V 曲线测试,其 V_OC 达到 544 . 3 mV,I_SC 达到 85 . 6mA,填充因子为 65 . 7% 。

Boron-doped and phosphorus-doped thin films ( nc-Si : H) were deposited by RF-PECVD system and applied to fabricate analogue tandem solar cells. The optical performance and morphology of the thin film sample were analyzed. The results showed that the optical band gap, conductivity, hall mobility and carrier concentration of P-type nc-Si : H thin films were 2 . 189 eV, 8 . 01 S / cm, 0 . 521 cm²/ ( V·S) and 9 . 61 X10¹⁹/ cm³, respectively and those of N-type nc-Si : H thin films were 1 . 994 eV,1 . 93 S / cm, 1 . 694 cm²/ ( V·S) and 7 . 113 X10¹⁸/ cm³, respectively. Nanocrystalline grain size was approximate 3 ~5 nm and crystal volume fraction was within 35 % ~ 45 % . The grain deposition was density and it had more uniform size. The analogue tandem solar cells with the structure of Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H / i-nc-Si : H / n-c-Si / Al were prepared in an area of 20 mmX20 mm and achieved the maximum open-circuit voltage V_OC, short-circuit current I_SC and fill factor of 544 . 3 mV, 85 . 6 mA and 65 . 7 % , respectively.