通过阳极极化和电化学阻抗谱测试,研究了铜在磷酸溶液中进行电化学抛光的电化学行为。 研究发现:随着磷酸浓度的增加,铜在 0 . 2 ,0 . 4 ,0 . 6 ,0 . 8 V 四个电位下电化学抛光后的粗糙度都呈现先减小、后增大的趋势,在磷酸质量分数为 55% 时达最低值;EIS 图谱拟合的 R_s 值的变化反映了磷酸盐粘膜层电阻和铜表面氧化膜电阻的变化,此外,随着磷酸浓度的增加,EIS 中第一个容抗半圆的弛豫时间延长,铜的溶解反应速度加快。

The eletrochemical properties of Cu eletrochemical polishing in phophoric acid solutions has been studied by anodic polarization and electrochemical impedance spectroscopy ( EIS) technique. The roughness of Cu firstly decreased, and then increased with the concentration of H₃PO₄increased at 0 . 2 V, 0 . 4 V, 0 . 6 V and 0 . 8 V, and reached the minimum roughness value when the H₃PO₄concentration was 55 % . The R_s value at different potential, fitting results of EIS, suggested the change in the resistance of viscous phosphate and Cu oxide films. With the increase of phosphate concentration, the relaxation time of the first capacitive semicircle extended, and it mean the acceleration in the copper dissolution reaction.