为研究含氢类金刚石( a-C: H) 薄膜的制备及性能, 充入含—CH₃ 原子团的 CH₄ 气体, 在不同CH₄/ Ar 流量比条件下于 N 型硅基底上沉积 a-C:H 薄膜,并借助椭偏仪、非接触式白光干涉仪及激光波面干涉仪对薄膜的沉积速率及表面粗糙度进行测定。 结果表明,含氢碳源气体的加入提高了类金刚石薄膜的沉积速率,改善了表面平整度。

The —CH₃ atoms methane gas was filled to study the preparation and performance of the hydrogen-containing DLC( a-C:H) thin film. At different CH₄ / Ar flow ratio condition, the a-C:H was deposited on the N type silicon substrate. By means of ellipsometer, the non-contact white light interferometer as well as the laser wave interferometer, the deposition rate and surface roughness were lucubrated. Experiment results show that the deposition rate of the diamond-like carbon thin film is enhanced by the addition of the hydrogen-containing carbon gas and the surface flatness is also improved.