基于弹性固结磨料小工具的RB-SiC平面修形抛光工艺研究

张朗朗, 高小钧, 郑方志, 江仁政, 尤佳旗, 孙玉利, 朱永伟

表面技术 ›› 2026, Vol. 55 ›› Issue (7) : 16-26.

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表面技术 ›› 2026, Vol. 55 ›› Issue (7) : 16-26. DOI: 10.16490/j.cnki.issn.1001-3660.2026.07.002
精密与超精密加工

基于弹性固结磨料小工具的RB-SiC平面修形抛光工艺研究

  • 张朗朗1, 高小钧1,*, 郑方志2, 江仁政2, 尤佳旗2, 孙玉利1, 朱永伟1
作者信息 +

RB-SiC Planar Figuring and Polishing Process Based on Small Elastic Consolidation Abrasive Tools

  • ZHANG Langlang1, GAO Xiaojun1,*, ZHENG Fangzhi2, JIANG Renzheng2, YOU Jiaqi2, SUN Yuli1, ZHU Yongwei1
Author information +
文章历史 +

摘要

目的 实现反应烧结碳化硅工件高效、高精度的修形抛光需求。方法 提出了基于弹性固结磨料小工具技术的碳化硅修形抛光新工艺。设计与制备了一种弹性自修整固结磨料小工具,基于Preston方程,建立了小工具的去除函数模型并验证了合理性;采用正交试验方法,优化了固结磨料小工具的加工工艺参数;并在三轴恒压数控抛光平台上进行了碳化硅修形抛光试验。结果 归一化理论去除函数与试验曲线吻合程度较高,粒径为7~10 µm的固结磨粒小工具替代游离磨料能够实现碳化硅的高效修形与抛光。采用固结聚集体金刚石小工具修形抛光RB碳化硅工件时,最佳工艺参数组合为公转转速125 r/min、压强0.125 MPa、转速比‒2、偏心率0.5,在此参数组合下,小工具在30 min内最大去除深度峰值变化率可以稳定在5.6%以内。采用优化参数修形抛光碳化硅工件时,碳化硅面形PV值从16.875λ收敛至4.619λ,收敛效率达到72.6%,RMS值从4.610λ收敛至0.868λ,收敛效率达到81.2%,表面平均粗糙度Ra由起始的0.503 μm下降到0.084 μm。结论 建立了弹性固结磨料小工具的去除函数模型并进行了试验验证。试验表明,小工具代替游离磨料抛光达到了粗抛修形碳化硅的工艺指标,修形抛光后的碳化硅粗糙度降低,表面质量明显提升,体现出弹性固结磨料小工具出色的修形抛光能力。

Abstract

The surface accuracy of silicon carbides is one of the important factors affecting the accuracy of optical systems. The traditional free abrasive figuring process has the disadvantages of low processing efficiency, poor stability of processing accuracy and complex process, which seriously restricts the efficiency and accuracy of silicon carbide surface figuring. In order to meet the requirements of high efficiency and high precision for the figuring of RB silicon carbide flat workpiece, a new figuring method of RB silicon carbides based on small elastic consolidation abrasive tool was proposed. A small elastic self-conditioning consolidation abrasive tool was designed and prepared. Based on Preston formula, the removal function model of the small elastic consolidation abrasive tool was established and verified, and the processing parameters of the tool were optimized by the orthogonal test. A figuring test of RB silicon carbide flat workpiece was carried out on a three-axis constant pressure CNC polishing platform.
Based on the Preston theoretical equation, the removal function model of the small tool was established. The effects of rotational speed ratio and eccentricity on the Gaussian-like characteristics of the removal function were studied. The theoretical contour curve of the small tool removal function was in good agreement with the experimental contour curve. The abrasive parameters of the consolidation abrasive tool were optimized by the fixed-point polishing experiment, and the feasibility of replacing the free abrasive with the small tool with the abrasive particle size of 7-10 μm to complete the figuring of silicon carbides was verified.
The process parameters optimization and stability of the removal function were studied. When the revolution speed was 125 r/min, the pressure was 0.125 MPa, the speed ratio was ‒2, and the eccentricity was 0.5, the comprehensive processing effect was the best. The stability of the removal function and the effect of polishing time on the removal function were studied under this set of parameters. The peak change rate of the maximum removal depth of the small tool stabilized within 5.6% within 30 min, and the material removal depth changed linearly with the dwell time, indicating that the material removal efficiency of the tool was constant, reflecting the excellent material removal stability of the elastic consolidation abrasive small tool.
The experimental study of silicon carbide figuring with elastic consolidation abrasive small tool was carried out. The material removal model of small tool figuring silicon carbides and the solution model of small tool dwell time were constructed. The figuring experiment of silicon carbides was carried out on the three-axis CNC polishing platform. The PV value of the machined workpiece surface converged from 16.875λ(λ=632.8 nm) to 4.619λ, and the convergence efficiency reached 72.6%. The RMS value converged from 4.610λ to 0.868λ, and the convergence efficiency reached 81.2%. The average surface roughness reached Ra 0.084 μm.
A removal function model for the small tool with elastically bonded abrasives has been established and verified through experiments. The experimental results show that replacing free abrasive polishing with this small tool meets the process indicators for the rough polishing and shaping of silicon carbides. After polishing and shaping, the roughness of silicon carbides is reduced, and the surface quality is significantly improved, which demonstrates the excellent polishing and shaping capabilities of the small tool with elastically bonded abrasives.

关键词

碳化硅 / 弹性固结磨料小工具 / 修形抛光 / 面形精度 / 收敛效率 / 去除函数模型

Key words

RB silicon carbides / elastic consolidation abrasive tool / figuring and polishing / surface accuracy / convergence efficiency / removal function model

引用本文

导出引用
张朗朗, 高小钧, 郑方志, 江仁政, 尤佳旗, 孙玉利, 朱永伟. 基于弹性固结磨料小工具的RB-SiC平面修形抛光工艺研究[J]. 表面技术. 2026, 55(7): 16-26
ZHANG Langlang, GAO Xiaojun, ZHENG Fangzhi, JIANG Renzheng, YOU Jiaqi, SUN Yuli, ZHU Yongwei. RB-SiC Planar Figuring and Polishing Process Based on Small Elastic Consolidation Abrasive Tools[J]. Surface Technology. 2026, 55(7): 16-26
中图分类号: TH161+.14   

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基金

国家自然科学基金委联合基金项目(U20A20293)

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