目的 探究第三代半导体材料易解理氮化镓晶体高效、低损伤抛光加工工艺。方法 提出使用超声辅助与光电化学机械相结合的抛光技术,对氮化镓晶体N面（即（000 1）面或-C方向）进行抛光加工。通过单因素试验研究抛光压力、抛光盘转速、超声振幅、光照强度以及外加电压等因素对氮化镓N面材料去除率（MRR）和表面粗糙度（Ra）的影响规律,通过正交试验探究最佳抛光加工工艺参数组合,通过XPS试验分析抛光前后氮化镓晶体N面化学元素构成,进一步探究氮化镓晶体超声辅助光电化学机械抛光材料去除机理。结果 试验结果表明,以上5个因素均对氮化镓MRR和Ra有显著影响。各因素对材料去除率的影响主次为抛光压力>外加电压>光照强度>抛光盘转速>超声振幅;各因素对表面粗糙度的影响主次为外加电压>光照强度>抛光压力>抛光盘转速>超声振幅。最佳工艺参数选取抛光压力为150 Pa,抛光盘转速为60 r/min,超声振幅为30 μm,光照强度为60%,外加电压为3 V。经最优参数加工后,氮化镓N面MRR为235.76 nm/h,Ra为1.298 nm。结论 采取超声辅助与光电化学机械相结合的抛光加工方法能够增强化学反应与机械去除的协同作用,实现氮化镓晶体材料的高效去除,获得超光滑无损伤加工晶面,满足后续实际应用的需求。
Abstract
Gallium nitride crystals, as a typical third-generation semiconductor material, have high hardness and melting point, excellent thermal and chemical stability, as well as high conductivity and good optoelectronic properties, and are widely used in fields such as optics and telecommunications. However, they also have high hardness, high brittleness, and easy cleavage properties, and the processing process is prone to surface and subsurface damage. To explore the efficient and low damage polishing process of easily cleavable gallium nitride crystals in third-generation semiconductor materials, further research is needed on their ultra precision polishing technology. A new composite field assisted polishing technology for easily cleavable gallium nitride crystals is proposed, which combines the advantages of ultrasonic vibration assisted polishing, photocatalysis assisted polishing, and electrochemical assisted polishing. This article proposes the use of a polishing technique combining ultrasound assistance and photoelectrochemical mechanical polishing to polish the N-surface of gallium nitride crystals. The influence of polishing pressure, polishing disc speed, ultrasonic amplitude, light intensity, and applied voltage on the removal rate and surface roughness of gallium nitride N-surface material during the polishing process is studied through single factor experiments. The optimal combination of polishing process parameters is explored through orthogonal experiments. By analyzing the chemical element composition of the N-surface of gallium nitride crystals before and after polishing through XPS experiments, the removal mechanism of gallium nitride crystal ultrasound assisted photoelectrochemical mechanical polishing materials is further explored. The results of the single factor experiment indicate that all five factors have a significant impact on the MRR and Ra of gallium nitride. The orthogonal experimental results show that the main and secondary factors affecting the removal rate of gallium nitride materials are: polishing pressure>applied voltage>light intensity>polishing disc speed>ultrasonic amplitude; The main and secondary factors affecting the surface roughness of gallium nitride are: applied voltage>light intensity>polishing pressure>polishing disc speed>ultrasonic amplitude. The optimal process parameters are selected as polishing pressure of 150 Pa, polishing disc speed of 60 r/min, ultrasonic amplitude of 30 μm, light intensity of 60%, and applied voltage of 3 V. After optimal parameter processing, the MRR of GaN N-surface is 235.76 nm/h and Ra is 1.298 nm. The removal mechanism of gallium nitride crystal ultrasound assisted photoelectrochemical mechanical polishing material is obtained through XPS experiments: under the irradiation of ultraviolet light, the polishing solution undergoes photocatalytic oxidation-reduction reaction, generating hydroxyl radicals, promoting the chemical reaction between the polishing solution and gallium nitride. Gallium oxide with soft texture is generated on the surface of gallium nitride. Under the action of external voltage, gallium oxide is generated on the surface of gallium nitride by anodic oxidation. On this basis, ultrasonic vibration is introduced to alleviate the uneven oxidation of the gallium nitride surface caused by the aggregation and settling of polishing solution during photocatalytic oxidation and electrolysis processes, enhance the synergistic effect of chemical reaction and mechanical removal during polishing process, and improve the surface quality of gallium nitride crystal and material removal. The polishing method combining ultrasound assisted and photoelectrochemical mechanical processing can enhance the synergistic effect of chemical reaction and mechanical removal, achieve efficient removal of gallium nitride crystal materials, obtain ultra smooth and non-destructive processing crystal surfaces, and meet the needs of subsequent practical applications.
关键词
易解理 /
氮化镓晶体 /
超声辅助 /
化学机械抛光 /
材料去除率 /
表面粗糙度
Key words
easily cleavable /
gallium nitride /
ultrasound assisted /
chemical mechanical polishing /
material removal rate /
surface roughness
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基金
国家自然科学基金面上项目（51675457）
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