目的 制备15 nm的(AlCrTaTiZrMo)N六元高熵合金氮化物薄膜，并对其扩散阻挡性能进行表征。方法 使用直流磁控溅射设备在单晶硅上沉积(AlCrTaTiZrMo)N高熵合金氮化物薄膜，然后在薄膜上沉积150 nm的Cu，形成Cu/(AlCrTaTiZrMo)N/Si结构。在600 ℃下，对该结构进行不同时间的退火处理，使用X射线衍射仪（XRD）、四探针测试仪（FPP）、原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM）研究薄膜成分及退火时间对薄膜组织结构、表面形貌、方块电阻的影响，研究其扩散阻挡性。结果 高熵合金氮化物薄膜与基体Si和Cu的结合性较好。沉积态高熵合金氮化物薄膜为非晶结构，表面光滑平整，方块电阻阻值较低。在600 ℃下经1 h退火后，薄膜仍为非晶结构，表面发生粗化。随着退火时间增加，5 h退火后，结构中出现少量纳米晶，大部分仍为非晶，表面粗糙度增加。退火7 h后，结构没有发生变化，仍为非晶包裹纳米晶结构，Cu表面生成部分岛状物，方块电阻阻值仍然较低，且无Cu-Si化合物生成，证明(AlCrTaTiZrMo)N高熵合金氮化物薄膜在长时间退火处理后，仍能保持良好的铜扩散阻挡性。结论 15 nm的(AlCrTaTiZrMo)N高熵合金氮化物薄膜在600 ℃下退火7 h后，其非晶包裹纳米晶的结构能有效阻挡Cu的扩散，表现出了优异的热稳定性与扩散阻挡性。

The work aims to prepare a 15 nm (AlCrTaTiZrMo)N senary high-entropy alloy nitride film and characterize the diffusion barrier properties of the film. The (AlCrTaTiZrMo)N high-entropy alloy nitride film was deposited on single crystal silicon by direct current magnetron sputtering equipment. 150 nm of Cu was deposited on the film to form a Cu/(AlCrTaTiZrMo)N/Si structure. The structure was then annealed at 600 ℃ for different time. X-ray diffractometry (XRD), four-point probe (FPP), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) were used to study the film composition and the effect of annealing time on the microstructure, surface morphology and sheet resistance of the film to evaluate the diffusion barrier properties. The film had a good adhesion to the substrates Si and Cu. The as-deposited film was amorphous and the surface was smooth and flat with a low value of sheet resistance. After annealed at 600 ℃ for 1 h, the film was still amorphous, but the surface became rough. With the increase of annealing time, some micro-nanocrystals appeared in the structure after annealing for 5 h, most of which were still amorphous, and the surface roughness increased. After annealing for 7 h, the structure was still amorphous and the nanocrystalline structure was encapsulated and some island-like grains were formed on the surface of Cu. The sheet resistance value was still low and no Cu-Si compound was formed. After annealing for long time, (AlCrTaTiZrMo)N high-entropy alloy nitride film still had good diffusion barrier properties on Cu. The amorphous inclusion nanocrystalline structure of 15 nm (AlCrTaTiZrMo)N high-entropy alloy nitride film after annealing at 600 ℃ after 7 h can eff-ectively block the diffusion of Cu, thus showing excellent thermal stability and diffusion barrier performance after prolonged annealing.