石墨烯具有很多优异的性质，是非常理想的硅晶体替代材料，有可能彻底改变现在人们的生活，引发新一轮的科技革命。但是单层石墨烯是一种零带隙的半金属，在半导体电子器件方面受到很大局限性。AB堆垛双层石墨烯的带隙可由外部垂直电场打开，既可用于半导体电子器件领域，又可以大大降低薄膜电阻，用于透明导电薄膜。尽管石墨烯制备方法很多，但受限于成本、质量、规模化等，化学气相沉积法是制备大面积、高质量双层石墨烯最主要的手段。综述了利用化学气相沉积法制备双层石墨烯的一系列工作，首先介绍单双层石墨烯的生长机理，主要根据催化剂类型对镍、铜、铜镍合金上石墨烯形核和生长作出解释；然后从碳源、生长氛围、催化剂、基底结构等对双层石墨烯的均匀性、晶畴尺寸和堆垛形式等方面进行分析；最后，总结以上化学气相沉积法制备双层石墨烯的工作，并对该领域的发展进行展望。

Graphene is an ideal substitute for silicon material due to many outstanding properties and can change people’s life completely and lead a new revolution in science and technology. However, MLG is a semi-metal with zero band- gap, which limits the applications in semiconductor applications. Bilayer graphene with Bernal-stacking can open a band-gap by vertical electrical field, which can be used in the field of semiconductor electronic devices and also can greatly reduce the sheet resistance. There are many methods to prepare bilayer graphene, but due to the consideration of cost, quality and scalability of BLG, chemical vapor deposition is the most important method to prepare numerous high-quality BLG. A series of work related to preparation of BLG by CVD was reviewed. The growth mechanism of BLG was firstly introduced and the nucleation and growth on Ni, Cu, and Cu-Ni alloy were explained according to type of catalyst. Then, the uniformity, domain size and stacking order of BLG were studied from the aspects of carbon sources, growth atmosphere, catalysts and structures. Finally, the above work of synthesizing BLG by chemical vapor deposition is summarized, and the outlook for future research is given.