目的 研究不同靶基距对高功率脉冲磁控溅射（HIPIMS）在凹槽表面制备钒膜微观结构和膜厚均匀性的影响，实现凹槽表面高膜层致密性和均匀性的钒膜制备。方法 采用 HIPIMS 方法制备钒膜，在其他工艺参数不变的前提下，探讨不同靶基距对凹槽表面钒膜相结构、表面形貌及表面粗糙度、膜层厚度均匀性的影响。采用 XRD、 AFM 及 SEM 等观测钒膜的表面形貌及生长特征。 结果 随着靶基距的增加， V(111)晶面衍射峰强度逐渐降低。当靶基距为 12 cm 时，钒膜膜层表面粗糙度最小，为 0.434nm。相比直流磁控溅射（DCMS），采用 HIPIMS 制备的钒膜呈现出致密的膜层结构且柱状晶晶界不清晰。采用 HIPIMS 和 DCMS 方法制备钒膜时的沉积速率均随靶基距的增加而减少。当靶基距为 8 cm时，采用 HIPIMS 方法在凹槽表面制备的钒膜均匀性最佳。 结论 采用 HIPIMS 方法凹槽表面钒膜生长的择优取向、表面形貌、沉积速率及膜厚均匀性均有影响。在相同的靶基距下，采用 HIPIMS 获得的钒膜膜厚均匀性优于 DCMS 方法。

Objective To investigate the influence of different target-substrate distance on the microstructure and thickness uniformity of vanadium films on the groove surface by high power impulse magnetron sputtering (HIPIMS), and prepare vanadium films with high film density and uniformity on the surface of the groove. Methods The vanadium films were prepared by HIPIMS method. The influence of different target-substrate distance on the surface structure, surface morphology, surface roughness and uniformity of the film thickness was discussed with other technological parameters not changed. Surface morphology and growth characteristics of vanadium films were observed by XRD, AFM and SEM. Results With the target-substrate distance increasing, the peak intensities of V (111) decreased gradually. The minimum roughness was 0.434 nm which deposited at a target-substrate distance of 12 cm. The HIPIMS vanadium films clearly exhibited a denser structure and the columnar crystal boundary was not as clear as DCMS films. The deposition rate at different positions of concave object obviously decreased with the increase of target-substrate distance in HIPIMS and DCMS process. For HIPIMS, the best thickness uniformity was achieved at a target-substrate distance of 8 cm. Conclusion The target-substrate distance has an obvious influence on the preferred orientation, surface morphology, deposition rate and thickness uniformity of vanadium films on the groove surface by HIPIMS. At the same target-substrate distance, the HIPIMS thickness uniformity is better than that of DCMS.