Objective To obtain SnS/ ZnO tandem solar cell possessing better photoelectric performance. Methods SnS and ZnO thin films were deposited on FTO glass with the magnetron sputtering method. The crystal structure, surface topography and optical property of SnS and ZnO prepared with different puttering parameters were investigated, and then the best technique for preparing SnS/ ZnO tandem solar cell was acquired. Results Under the conditions of sputtering power of 28 W, deposition time of 40 min, working pressure of 2. 5 Pa and sputtering power of 36 W, deposition time of 25 min, and working pressure of 2. 3 Pa, the SnS films all had good (111) preferred orientation, the grain size was big, the surface was smooth and dense, and the energy bad gaps were 1. 48 and 1. 83 eV, respectively. Under the conditions of sputtering power of 100 W, deposition time of 10 min and working pressure of 2. 5 Pa, ZnO was more suitable as the n layer of solar cell, because it had better crystallization properties and higher transmitance. Using large energy gap SnS(1. 83 eV) film as the external absorption p layer and low energy gap SnS (1. 48 eV) film as the internal absorption p layer, the FTO/ n-ZnO/ p-SnS(1. 83 eV) / n-ZnO/ p-SnS(1. 48 eV) / Al tandem solar cell was pre- pared. The energy conversion efficiency of the tandem solar cell was 0. 108% , and the short circuit current and open circuit voltage were 0. 90 mA and 0. 40 V, respectively. Conclusion The photoelectric properties of the SnS / ZnO tandem solar cell were better than those of ordinary monolayer solar cell.