Objective To optimize the process of quartz metallization through SRIM simulation. Methods Though comparative analysis of different interfaces combined with SRIM simulation, the ideal metallization interface was obtained. The approach of adding the blocking layer was put forward to get the interface. The SRIM simulation results were analyzed, and four kinds of thickness ( 5, 10, 15, 20 nm) were selected. The range distribution of Ti ion with the energy of 20 keV implanted into specimens of blocking layer with different thicknesses was simulated to select the appropriate thickness and the metallization layer was tested with the method of high and low temperature shock. Results The range for the appropriate thickness of the blocking layer was 10 ~ 15 nm. Within this range, the site for the maximum concentration of implanted Ti was near the interface between the metallization layer and the quartz glass. Conclusion For the different ion implantation energy, the simulation could obtain the optimum thickness of blocking layer using SRIM program, and then improve the performance of the metallization layer.