Objective The optimal CMP technique used for TSV Technology was explored in this paper. Methods In alkaline condition, chemical mechanical polishing was carried out on the copper film and the high polishing rate and low surface roughness were acquired through adjustment of polishing technical parameters and polishing liquid formulation, taking advantage of the extremely strong chelating ability of FA / O chelating agent. Results The Cu film removal rate reached 2067. 245 nm / min and the roughness was obviously improved after CMP when the pressure was 27. 56 kPa, the flow rate was 175 mL / min, the rotating speed was 105 / 105 r / min, the pH value was 11. 0, the temperature was 40 ℃ , and the slurry contained 1% oxidant, 50% abrasive and 10% chelating agent. Conclusion The process could achieve high polishing rate.