Bismuth ferrite is the only single-phase multiferroic material at room temperature. BFO materials received extensive attention because of its high ferroelectric Curie temperature, large remnant polarization, narrow band gap and multiferroic property. sol-gel method is a common method for preparation of bismuth ferrite thin film. The research progress in the effects of process parameters ( such as precursor solution, annealing temperature, annealing atmosphere, bottom electrode) and dopants on the electrical properties of bismuth ferrite thin films was reviewed. The reasons that different preparation processes led to distinct electrical properties of BFO thin films were analyzed. The superior preparation conditions of BFO thin films via sol-gel were summarized. Finally, some problems to be solved were put forward.