Objective To study the laser film stacks and the methods for improving the film爷 s laser-induced damage threshold. Methods Based on the optimization distribution of electric field intensity, film stacks with high anti-reflection in the band of 3 ~ 5 滋m and cut-off in the wavelength of 1064 nm on silicon substrates were designed. All these films were deposited by thermal evaporation techniques, and then the as-deposited thin films underwent a treatment process of laser irradiation and vacuum annealing. Results The results indicated that the various distribution of electric field intensity caused different laser damage properties of thin films. The laser-induced damage threshold ( LIDT) could be improved by designing suitable film stacks to lower the electric field intensity in the interface between layers, or putting the electric field peak in layers with high laser damage ability. The LIDT could also be improved by laser irradiation and vacuum annealing. Conclusion The final laser-induced damage threshold was improved from 3 J / cm²to 6. 2 J / cm²by the process of design optimization, laser irradiation and vacuum annealing.