Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition

ZHAO Qi, DAI Ming-jiang, WEI Chun-bei, QIU Wan-qi, HOU Hui-jun, TAN Di

Surface Technology ›› 2013, Vol. 42 ›› Issue (5) : 19-23.

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PDF(5022 KB)
Surface Technology ›› 2013, Vol. 42 ›› Issue (5) : 19-23.

Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition

  • ZHAO Qi1, DAI Ming-jiang2, WEI Chun-bei2, HOU Hui-jun2, TAN Di2, QIU Wan-qi3
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Abstract

Diamond films were deposited on metal copper substrate with a buffer layer of titanium with the mixture gas of methane and hydrogen by hot filaments chemical vapor deposition ( HFCVD) . Effects of different thickness of titanium layer on diamond films by HFCVD were investigated. The components of films were investigated using X-ray diffraction ( XRD) and laser Raman spectrum, and the surface morphology and structure were observed by scanning electron microscopy ( SEM) . The surface element of samples processed by heat treatment were analyzed using energy disperse spectroscopy ( EDS ) . The results show that when the thickness of titanium layer is 3 μm, the diamond film breaks down due to large internal stress. When the thickness of titanium increases to 25 μm, the diamond film is good and don爷 t break down with the existence of internal stress in the membrane. The diffusion between copper and titanium happens when the sample is processed by heat treating at 850 ℃ for

Key words

diamond films; titanium interlayer; internal stress; hot filaments chemical vapor deposition

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ZHAO Qi, DAI Ming-jiang, WEI Chun-bei, QIU Wan-qi, HOU Hui-jun, TAN Di. Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition[J]. Surface Technology. 2013, 42(5): 19-23
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