Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation

WANG Min, GUO Hui-yong, ZHANG Guo-ge, LI Wen-fang

Surface Technology ›› 2013, Vol. 42 ›› Issue (4) : 35-38.

PDF(3990 KB)
PDF(3990 KB)
Surface Technology ›› 2013, Vol. 42 ›› Issue (4) : 35-38.

Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation

  • WANG Min1, GUO Hui-yong2, ZHANG Guo-ge3, LI Wen-fang3
Author information +
History +

Abstract

Ba0.5Sr0.5TiO3thin films were conducted by microarc oxidation and placing titanium plates as anode in 0 . 2 mol / L barium hydroxide & 0 . 2 mol / L strontium hydroxide aqueous solution. Phase composition, elements distribution, cross section structure and dielectric properties of the films were characterized. The results show that the films are composed mainly of tetragonal Ba0.5Sr0.5TiO3phases. The distribution of Ba, Sr , Ti, and O element is uniform in dense layer in addition to micropore area. The film has excellent dielectric property, in the frequency of 1 kHz dielectric constant value is 411 . 3 . At last, the formation process of ferroelectric films deposited by microarc oxidation was analyzed, possible chemical reactions of the film’s growth were suggested.

Key words

Ba0.5Sr0.5TiO3; ferroelectric films; microarc oxidation; dielectric property

Cite this article

Download Citations
WANG Min, GUO Hui-yong, ZHANG Guo-ge, LI Wen-fang. Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation[J]. Surface Technology. 2013, 42(4): 35-38
PDF(3990 KB)

Accesses

Citation

Detail

Sections
Recommended

/