The Modified Embedded Atom Method ( MEAM) and Kinetic Monte Carlo ( KMC) methods were first used to carriy out a computer simulation of the Ti-Si-N film growth process. Based on the reasonable selection of each parameter of MEAM potential function, the programming software was used to simulate the growth process of the film in different particle deposition conditions. The simulation results of this new approach and the potential of using the traditional simple Mouse compared to the simulation results more accurate, and more consistent with the experimental results. Simulation results show that the deposition temperature has a direct impact on the formation process of the Ti-Si-N films. When the deposition temperature is 800 K,the formation of the island is the most ideal, defect rate minimum.