Research on the Copper Electrochemical Polishing in Phosphoric Acid

LI De-yu, XIA Guo-feng, ZHENG Zhen, WANG Zi-yu, TIAN Dong, WANG Chen, ZHAI Wen-jie, LI Ning

Surface Technology ›› 2013, Vol. 42 ›› Issue (3) : 1-4,37.

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Surface Technology ›› 2013, Vol. 42 ›› Issue (3) : 1-4,37.
Research and Exploration

Research on the Copper Electrochemical Polishing in Phosphoric Acid

  • LI De-yu, XIA Guo-feng, ZHENG Zhen, WANG Zi-yu, TIAN Dong, WANG Chen, ZHAI Wen-jie, LI Ning
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Abstract

The eletrochemical properties of Cu eletrochemical polishing in phophoric acid solutions has been studied by anodic polarization and electrochemical impedance spectroscopy ( EIS) technique. The roughness of Cu firstly decreased, and then increased with the concentration of H3PO4increased at 0 . 2 V, 0 . 4 V, 0 . 6 V and 0 . 8 V, and reached the minimum roughness value when the H3PO4concentration was 55 % . The Rs value at different potential, fitting results of EIS, suggested the change in the resistance of viscous phosphate and Cu oxide films. With the increase of phosphate concentration, the relaxation time of the first capacitive semicircle extended, and it mean the acceleration in the copper dissolution reaction.

Key words

copper; phosphoric acid; electrochemical polishing; roughness; electrochemical impedance spectroscopy

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LI De-yu, XIA Guo-feng, ZHENG Zhen, WANG Zi-yu, TIAN Dong, WANG Chen, ZHAI Wen-jie, LI Ning. Research on the Copper Electrochemical Polishing in Phosphoric Acid[J]. Surface Technology. 2013, 42(3): 1-4,37
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