In order to get good amorphous silicon film applicable for devices, amorphous silicon ( α-Si: H) film was aquired by plasma enhanced chemical vapor deposition system ( PECVD) . Then the film was doped by Ni ion implantation. The thickness of the film was measured by spectroscopic ellipsometry, which was about 200 nm stably in the decided deposition parameters. XRD test shown that the film was completely amorphous. Square resistance of the doped film was tested by the four point probe test instrument finally. The result shows that, in Ni ion implantation parameters of 2 . 5 X10¹⁹个 / cm³and 35 . 2 keV, amorphous silicon film with good electronical property is acquired. And TCR of the film is about-0 . 7 % . And square resistance of the film is 992 kΩ / □ at room temperature.