Preparation of Low Refractive Index Optical Thin Film by PECVD Technology

HU Jiu-long, HANG Ling-xia, ZHOU Shun

Surface Technology ›› 2013, Vol. 42 ›› Issue (2) : 95-97.

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PDF(2262 KB)
Surface Technology ›› 2013, Vol. 42 ›› Issue (2) : 95-97.
Applied Technology

Preparation of Low Refractive Index Optical Thin Film by PECVD Technology

  • HU Jiu-long, HANG Ling-xia, ZHOU Shun
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Abstract

The Fluorine-containing silicon oxide film was deposited on a silicon wafer by plasma enhanced chemical vapor deposition. The optical parameters of the coatings were measured by ellipsometer and the effect of C2F6gas flow rate on the refractive index , the extinction coefficient and the deposition rate of the coating was studied when the pumping speed was fixed or the degree of vacuum is fixed. Experiments show that at 550 nm the refractive index is 1 . 37 and the extinction coefficient is 4 X10-4in the case of temperature 300 益 , RF power 200 W, presure 20 Pa, SiH460 sccm, N2O 40 sccm,C2 F6 30 sccm. The low-index coating can be used as optical antireflection coating materials.

Key words

coating; PECVD; low-index; SiOF

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HU Jiu-long, HANG Ling-xia, ZHOU Shun. Preparation of Low Refractive Index Optical Thin Film by PECVD Technology[J]. Surface Technology. 2013, 42(2): 95-97
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