The indium tin oxide(ITO)thin films were deposited on glass substrates by energy filtering magnetron sputtering(EFMS)at low temperature. The effects of different filtering electrode mesh, sputtering power and the temperature of the substrates on the photoelectric properties of ITO films were studied. The results show that we can received the ITO thin films have a resistivity of 4.9×10-4 Ω·cm and transparency of 87% in the visible wavelength region, when the mesh of filtering electrode for 60 mesh, the temperature of the substrates for 81℃ and sputtering power for 165 W.