W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes.The results show that when use the single target magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8~1.2 A, the gas flow of Ar is 25mL/min(standard state), the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min(standard state), Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ce-ramic matrix, and 45 steel substrate.