The Development and Application of Hall No Gate Ion Source

WNAG Wen-qi, ZHU Chang

Surface Technology ›› 2012, Vol. 41 ›› Issue (2) : 58-60.

PDF(2730 KB)
PDF(2730 KB)
Surface Technology ›› 2012, Vol. 41 ›› Issue (2) : 58-60.
Research and Exploration

The Development and Application of Hall No Gate Ion Source

  • WNAG Wen-qi, ZHU Chang
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Abstract

Based on ion-beam assisted deposition technique, new type of Hall of independent non-grid ion source was developed, takeing advantage of the ion source, a variety of optical thin films were coated on the glass substrate with ion beam assisted deposition method. By various testing of the optical properties of thin films it shows that the coating strength, adhesion, corrosion resistance and opticalpro perties of the thin films prepared by Hall no gate ion source has significantly improved than prepared by the conventional thermal evaporation process.

Key words

hall no gate ion source; IBAD; optical thin-film

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WNAG Wen-qi, ZHU Chang. The Development and Application of Hall No Gate Ion Source[J]. Surface Technology. 2012, 41(2): 58-60
PDF(2730 KB)

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