Advances in Atmospheric Pressure Plasma Etching Technology for Optical Elements and Semiconductor Processing

LYU Hang; HUI Yingxue; LIU Weiguo; LIU Yuqi; JU Shaojia; CHEN Xiao; GE Shaobo; ZHANG Jin

doi:10.16490/j.cnki.issn.1001-3660.2026.02.011

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Surface Technology ›› 2026, Vol. 55 ›› Issue (2) : 134-150. DOI: 10.16490/j.cnki.issn.1001-3660.2026.02.011

Functional Surfaces and Technology

Advances in Atmospheric Pressure Plasma Etching Technology for Optical Elements and Semiconductor Processing

LYU Hang^1,2, HUI Yingxue^1,2,*, LIU Weiguo¹, LIU Yuqi^1,2, JU Shaojia^1,2, CHEN Xiao¹, GE Shaobo¹, ZHANG Jin¹

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Abstract

Atmospheric Pressure Plasma (APP) etching technology has emerged as a transformative solution for ultra-precision manufacturing of optical components and semiconductor devices, addressing critical limitations inherent in conventional techniques such as stress-induced subsurface damage, low material removal rates (MRR), and thermal distortion. This technology leverages non-contact processing, ambient pressure operation, and synergistic physico-chemical material removal mechanisms to achieve unprecedented levels of surface accuracy and integrity. This review comprehensively explores the latest research advancements and future directions in APP etching, with focuses on its application in achieving sub-nanometer form accuracy and atomic-scale surface perfection.
The core progress lies in the innovative design and optimization of major APP discharge configurations, including Dielectric Barrier Discharge (DBD), Radio Frequency (RF) discharge, and Microwave (MW) discharge systems. Each system offers distinct advantages. Namely, DBD provides exceptional stability and uniformity for delicate surface treatments; RF discharge balances high electron density with excellent controllability for efficient etching; MW discharge delivers the highest energy density, enabling atomic-level precision, particularly for refractory materials, albeit with higher system complexity. Hybrid excitation strategies, combining different discharge modes, demonstrate significant potential in overcoming the inherent limitations of single-mode systems, offering synergistic performance enhancements.
A pivotal breakthrough is made in the development and mastery of the Atomic Selective Etching (ASE) mode. By precisely controlling plasma chemistry, particularly gas composition ratios, ASE enables the preferential removal of high-energy surface atoms while preserving the underlying lattice. This revolutionary approach achieves an unprecedented unification of ultra-high MRR with atomic-scale surface smoothness, far surpassing the capabilities of traditional Chemical Mechanical Polishing (CMP) or Elastic Emission Machining (EEM). The surface evolution is understood through a three-stage model: initial isotropic smoothing, crystal-orientation dependent structuring, and culminating in the ASE phase for ultimate atomic-level precision.
Surface quality control, paramount for high-end optical and semiconductor applications, has significant advancements. Beyond ASE, techniques like pure Ar plasma exposure induce controlled surface atom migration and self-organized reconstruction, forming highly uniform step-terrace structures on atomically flat surfaces, effectively eliminating subsurface damage (SSD). For materials prone to forming non-volatile reaction byproducts, hybrid processes combining APP etching with periodic pulsed laser cleaning have been developed to remove these layers without substrate damage, restoring etching activity and achieving sub-nanometer roughness. Managing the inherent non-linear thermal effects during etching is critical for maintaining form accuracy. Sophisticated strategies have been implemented, including the development of low-temperature plasma sources, transient thermal modeling to predict temperature fields, dynamic compensation algorithms, and non-linear dwell time optimization. These approaches successfully reduce machining residuals by up to 47.1% and minimize thermal distortion, ensuring process stability and surface uniformity, even for large free-form surfaces.
Despite these remarkable achievements, key challenges persist and define crucial future research directions. Controlling non-linear thermodynamic effects and achieving perfect uniformity over large areas remain significant hurdles. A deeper fundamental understanding of the atomic-scale interaction mechanisms between plasma species and material surfaces under extreme conditions is still essential. Furthermore, scaling the technology for industrial adoption also requires breakthroughs in developing large-area, uniform high-density plasma sources, intelligent multi-axis motion control systems, and closed-loop process monitoring integrating multi-sensor feedback.
In conclusion, APP etching stands at the threshold of transitioning from laboratory innovation to industrial-scale ultra-precision manufacturing. Its unique ability to deliver simultaneously high efficiency, atomic-level accuracy, and low subsurface damage offers a revolutionary pathway for fabricating advanced optical components and semiconductor devices. Addressing the remaining challenges through continued fundamental research into atomic-scale mechanisms, development of novel etching chemistries, advancement of intelligent control strategies for shape and property regulation, and innovation in large-scale plasma source design will solidify APP etching's role as a core engine driving the frontiers of precision manufacturing for next-generation photonics, electronics, and quantum technologies.

Key words

atmospheric plasma etching / optical component machining / semiconductor fabrication / ultra-smooth surfaces / atomic-scale manufacturing

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LYU Hang, HUI Yingxue, LIU Weiguo, LIU Yuqi, JU Shaojia, CHEN Xiao, GE Shaobo, ZHANG Jin. Advances in Atmospheric Pressure Plasma Etching Technology for Optical Elements and Semiconductor Processing[J]. Surface Technology. 2026, 55(2): 134-150

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Funding

National Natural Science Foundation of China (NSFC) (52305613, W2421112); Shaanxi Province Key R & D Program General Project - Industrial Field (2024GX-YBXM-085); Shaanxi Provincial Department of Education Key Scientific Research Project (23JY033)