Chemical Mechanical Polishing Technology for Atomic-level Planarization: Challenges and Progress in the Post-Moore Era

ZHANG Lifei; LU Xinchun

doi:10.16490/j.cnki.issn.1001-3660.2025.23.003

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Surface Technology ›› 2025, Vol. 54 ›› Issue (23) : 47-67. DOI: 10.16490/j.cnki.issn.1001-3660.2025.23.003

Special Topic—Atomic-level manufacturing

Chemical Mechanical Polishing Technology for Atomic-level Planarization: Challenges and Progress in the Post-Moore Era

ZHANG Lifei^1,2,*, LU Xinchun^1,2,*

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Abstract

As integrated circuit technology enters the post-Moore era, chip architecture is undergoing a revolutionary transformation. The number of interconnect layers is increasing exponentially, while feature sizes continue to shrink and gradually approach fundamental atomic-scale physical limits. Meanwhile innovative structures and materials such as new metal interconnects (e.g., Cobalt, Ruthenium), ultra-low-k dielectrics, 3D FinFETs, and Gate-All-Around transistors are being widely adopted. This evolution imposes unprecedented and stringent technical requirements on global wafer planarization technology, which require achieving sub-angstrom-level flatness across the entire wafer surface, controlling the thickness of surface and subsurface damage layers to nearly a single atomic layer, and ensuring high uniformity across different scales. Chemical Mechanical Polishing (CMP), the sole critical process in modern chip manufacturing for achieving global planarization, has itself evolved from micron-scale material removal to the precise, controllable, and selective removal of materials at the atomic scale, while also enabling perfect atomic-level interface regulation, achieved through complex chemical-mechanical synergy. This paper aims to systematically address the aforementioned challenges and provides a comprehensive and in-depth review of atomic-level CMP technology, covering its core bottlenecks, fundamental scientific mechanisms, extended process and consumable engineering, to high-end equipment system innovations. The article first precisely analyzes three major severe challenges facing atomic-level CMP in its industrialization path. Firstly, the challenge of material diversity, stemming from the significant differences in physical and chemical properties between heterogeneous materials, imposing seemingly contradictory demands for selective removal. Secondly, the challenge of surface and interface defect control, involving various complex defects such as galvanic corrosion, nano-scratches, dishing, corrosion pits, organic residues, and particle contamination, with formation mechanisms characterized by multi-factor dynamic coupling. Thirdly, the challenge of diversified process specifications, as different process stages like Shallow Trench Isolation (STI), copper interconnects, and cobalt interconnects have vastly different and demanding technical requirements for material removal selectivity, uniformity, and defect control. To fundamentally understand and resolve these challenges, this paper explores the underlying mechanisms. In the CMP polishing process, it thoroughly explores the formation and evolution laws of transient surface oxide films, the dynamic chelation and dissolution behavior of metal ions by complexing agents, the competitive adsorption passivation mechanism of inhibitors in microscopic regions, and the nanoscale cutting, plowing, and rolling fatigue effects of abrasive particles on the softened layer under mechanical action. For the post-cleaning process, it systematically elaborates on the multi-level physicochemical mechanisms involved, including the overcoming of van der Waals adhesion forces by electrostatic repulsion, the breaking of "chemical bridges" through complexation-etching, and the consequent induced physical detachment of particles via "lift-off," highlighting their combined series and parallel synergistic effects. From the perspective of process control, this paper details the influence laws and intrinsic correlations between core parameters, such as multi-zone polishing head pressure, relative speed and trajectory between the head and platen, polishing pad conditioning strategy, slurry flow rate and injection methods, and key output metrics such as material removal rate (MRR), within-wafer non-uniformity (WIWNU), wafer-to-wafer non-uniformity (WTWNU), and surface roughness (Ra). Concurrently, it reviews cutting-edge advances in multi-objective process optimization utilizing computational fluid dynamics (CFD) for simulating interface slurry flow fields and mass transfer, finite element analysis (FEA) for stress distribution, and intelligent methods such as genetic algorithms and machine learning. In terms of consumable design and innovation, the paper systematically analyzes the rational design strategies for polishing slurries, including the control of nanoscale abrasive morphology, size, and concentration, the development of novel strong oxidizers, the rational design of complexing agent molecular structures, and the synergistic formulation principles of multi-functional additives like corrosion inhibitors and surfactants. For polishing pads, it discusses the decisive influence of polyurethane material's microporous structure, mechanical properties, and the design of surface micro-textures and macroscopic grooves on slurry transport, interface contact state, and removal uniformity. Furthermore, it reviews the current research status and development trends regarding environmentally friendly organic bases, specific complexing agents in post-CMP cleaning solutions, and the structural optimization of PVA brushes for efficient contaminant removal and suppression of secondary contamination. At the level of high-end equipment systems, this paper summarizes the technological integration innovations in 12-inch CMP integrated equipment. These include multi-zone independent real-time pressure control and flexible carrier technology, intelligent in-situ film thickness monitoring and endpoint detection systems based on optical interferometry, eddy current effects, and frictional signal analysis, and modular high-efficiency post-cleaning and drying units integrating technologies like double-sided brush scrubbing, megasonic cleaning, and the Marangoni effect. Additionally, it explores the application potential and operating mechanisms of various field-assisted polishing technologies, such as ultrasonic vibration, ultraviolet photocatalysis, plasma activation, electrochemical assistance, and magnetic field control, in enhancing chemical reactivity, improving material removal efficiency, and enhancing surface quality. Finally, the paper offers a strategic outlook on future development directions, positing that the next leap in atomic-level CMP technology will inevitably rely on deep multi-disciplinary integration. This entails utilizing in-situ real-time characterization techniques and multi-scale simulations to reveal the mechanisms of dynamic material removal and defect generation at the atomic/molecular level; constructing digital twin systems that integrate first-principles calculations, molecular dynamics, and macroscopic process models; and realizing intelligent inverse design of process parameters and adaptive optimal control through artificial intelligence and big data analytics. Only through such end-to-end innovation, spanning fundamental science to engineering application, can existing technical bottlenecks be systematically broken through, thereby providing a solid, reliable, and advanced manufacturing foundation and technical pathway for the sustainable development of integrated circuits in the post-Moore era.

Key words

chemical mechanical polishing / atomic-level / process / mechanism / consumables / equipment

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ZHANG Lifei, LU Xinchun. Chemical Mechanical Polishing Technology for Atomic-level Planarization: Challenges and Progress in the Post-Moore Era[J]. Surface Technology. 2025, 54(23): 47-67 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.23.003

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