Research Progress on Material Removal Mechanism of SiC by Auxiliary Enhanced Chemical Mechanical Polishing

XU Tengfei; LIU Wei; DENG Zhaohui; CHEN Gen; ZHU Decai

doi:10.16490/j.cnki.issn.1001-3660.2025.16.001

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Surface Technology ›› 2025, Vol. 54 ›› Issue (16) : 1-17. DOI: 10.16490/j.cnki.issn.1001-3660.2025.16.001

Research Review

Research Progress on Material Removal Mechanism of SiC by Auxiliary Enhanced Chemical Mechanical Polishing

XU Tengfei¹, LIU Wei^1,*, DENG Zhaohui², CHEN Gen¹, ZHU Decai²

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Abstract

Silicon carbide has excellent physical and chemical properties and is a typical third-generation semiconductor material. Chemical mechanical polishing is the key technology to achieve global planarization of silicon carbide substrates, but silicon carbide has high hardness and chemical inertness, which leads to the problems of difficult material removal, easy surface damage and high processing costs, failing to meet the urgent needs of efficient and low damage planarization processing. At present, the research of chemical mechanical polishing of silicon carbide and its auxiliary enhancement mainly focuses on the development of experiments and technical methods, while there are some deficiencies in the in-depth research of material removal mechanism in the chemical reaction and mechanical removal process. According to the typical crystalline structure characteristics of silicon carbide, the work aims to discuss the properties of silicon carbide materials with different crystalline structures and the effects of material properties on polishing removal. The material removal mechanism and micro-removal mechanism of chemical mechanical polishing of SiC were reviewed. Several typical auxiliary enhanced chemical mechanical polishing techniques were analyzed to reveal the material removal mechanism of SiC under multi-energy field coupling, as well as the facilitation of multi-energy field coupling effect on the mechanical and chemical reaction in the polishing process. The future development direction of improving the material removal rate and surface quality of SiC polishing was also prospected. It was expected to provide new research methods and ideas for silicon carbide processing with high efficiency, high quality, low damage and low cost.
During the CMP process of single-crystal SiC, the acidity or alkalinity of the polishing liquid had a significant impact on the material removal mechanism and surface chemical reactions. Among them, in an alkaline environment, the oxidation reaction of SiC was more intense, generating soluble SiO₃^2- and CO₃^2-, which led to a higher MRR and an excellent polishing surface. The oxidation capacity of the oxidant in the polishing liquid determined the quantity of oxidation products on the surface of SiC. When the concentration of the oxidant was relatively high, there was an atomic step configuration on the surface of the wafer, which was flat. Through molecular dynamics simulation studies, it was found that the material removal during the SiC polishing process was the combined effect of different atomic-level removal mechanisms. The formation of Si—O—Si interface bridge bonds and the insertion of O atoms on the surface led to the breakage of Si—C bonds. The removal of Si atoms disrupted the lattice, and the removal of Si atoms had a significant impact on the removal of C atoms.
SiC auxiliary enhanced chemical mechanical polishing mainly included two types: chemical auxiliary enhanced polishing and energy auxiliary enhanced polishing. Chemical mechanical polishing mainly increased the concentration of highly oxidizing —OH through photocatalysts and Fenton reagent. The —OH produced during polishing broke the C—Si and C—C bonds of SiC into C and Si atoms, and C and Si atoms reacted with O atoms respectively to form CO₂ and SiO₂ oxide layers, causing oxidation corrosion of the SiC substrate. Energy auxiliary enhanced polishing could reduce the damage caused by the mechanical behavior of abrasives, promote chemical reactions, and increase the atomic removal rate. However, the effect of auxiliary enhanced chemical mechanical polishing in optimizing the surface quality of the processed surface was limited. In the future, the synergy mechanism of the multi-energy field should be further optimized to achieve more efficient and stable ultra-precision polishing.

Key words

silicon carbide / chemical mechanical polishing / crystalline structure / auxiliary enhancement / material removal mechanism

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XU Tengfei, LIU Wei, DENG Zhaohui, CHEN Gen, ZHU Decai. Research Progress on Material Removal Mechanism of SiC by Auxiliary Enhanced Chemical Mechanical Polishing[J]. Surface Technology. 2025, 54(16): 1-17 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.16.001

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Funding

Key Project of National Natural Science Foundation of China (U23A20634); Hunan Provincial Natural Science Foundation Project (2023JJ30251); Hunan Provincial Degree and Postgraduate Teaching Reform Research Project (2023JGSZ091)