As a new technology that can replace wire-cut slicing, laser modified stripping is able to separate wafers from silicon carbide ingots with less raw material loss, significantly reducing substrate manufacturing costs. However, the ingot surface quality will affect the degree of damage to the wafer during laser stripping and stripping efficiency. To improve the surface quality of ingots, they often need to be ground first. The quality of the grinding process directly affects the quality and efficiency of the subsequent processing, so it is necessary to explore the effect of ultra-precision grinding process parameters on the surface quality of silicon carbide ingots. The purpose of this paper is to explore the effect of grinding process parameters on the surface roughness of silicon carbide ingots, improve the quality of ingot grinding process, and then improve the quality and efficiency of silicon carbide laser stripping. In this paper, grinding experiments of silicon carbide ingot are carried out with ceramic bonding cup-shaped diamond wheels on a self-developed reducing machine, and orthogonal tests are designed and carried out with four grinding process parameters, namely, grinding wheel speed, ingot speed, feed speed and feed displacement, as the experimental factors and surface roughness as the measurement index. According to the Taguchi analysis method, the mean value of surface roughness and signal-to-noise ratio of experimental results are obtained, and the effect of four process parameters on surface roughness is analyzed, and the significance of the effect of the studied parameters on the experimental results is judged by analysis of variance (ANOVA), and finally the surface morphology of the specimen after grinding under different combinations of parameters is observed and analyzed with a tool microscope. The experimental results show that the effect of four process parameters on the surface roughness of silicon carbide ingots is in the following order: wheel speed, feed speed, ingot speed, feed displacement. In addition, wheel speed and feed speed have a significant effect on the surface roughness. The higher the wheel speed, the smaller the feed speed, the smaller the surface roughness of the ingot. The optimal combination of process parameters obtained by the Taguchi method is 2 499 r/min for grinding wheel speed, 260 r/min for ingot speed, 0.2 μm/s for feed speed, and 30 μm for feed displacement, which corresponds to the surface roughness Ra that can be reduced to less than 6 nm. There are significant differences in the surface of silicon carbide ingots after grinding under different process parameters: under the unsuitable process parameters, the surface of the silicon carbide ingot has more pits with wide and deep grinding marks, whereas the surface ground under the resulting optimal process parameters is relatively bright and has finer grinding streaks, showing better ductility and fluidity. The Taguchi analysis method can be used to select an appropriate combination of silicon carbide ingot grinding process parameters for surface machining quality optimization, through the optimization of process parameters can effectively reduce the surface roughness, improve the quality of the grinding surface, and have guiding significance for the ultra-precision grinding of silicon carbide.
Key words
grinding process parameters /
silicon carbide /
surface roughness /
orthogonal test /
Taguchi method /
analysis of variance
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Funding
National Natural Science Foundation of China (52075160); The Science and Technology Innovation Program of Hunan Province (2023GK2008); Major Project of Hunan Provincial Natural Science Foundation (2021JC0005)
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