Atomic Layer Deposition Technology for Surface Conductive Layers of Precision Resonant Devices

GONG Ting; FENG Hao

doi:10.16490/j.cnki.issn.1001-3660.2025.12.016

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Surface Technology ›› 2025, Vol. 54 ›› Issue (12) : 175-185. DOI: 10.16490/j.cnki.issn.1001-3660.2025.12.016

Surface Functionalization

Atomic Layer Deposition Technology for Surface Conductive Layers of Precision Resonant Devices

GONG Ting, FENG Hao^*

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Abstract

The Pt conductive layer is prepared on the surface of the hemispherical gyroscope resonator by the atomic layer deposition (ALD) technology to improve the uniformity and bonding strength of the Pt thin film.
The oxide/metal thin films, fabricated through ALD, are employed as transition layers for the hemispherical resonator gyroscopes, followed by the deposition of Pt as the conductive layer. To assess the uniformity of the Pt films, a silicon wafer attachment test is designed to simulate the structural characteristics of a hemispherical harmonic oscillator, while spectroscopic ellipsometry (SE) is employed to measure the film thickness. Comprehensive characterization of the films is conducted using advanced analytical techniques: X-ray photoelectron spectroscopy (XPS) is utilized to determine the chemical composition and oxidation state of the films; Grazing-incidence X-ray diffraction (GIXRD) provides insights into the crystallographic orientation and phase purity; A scanning electron microscopy (SEM) and an atomic force microscopy (AFM) are employed to examine surface morphology and quantify roughness parameters of the films. The microstructure, elemental distribution, and interfacial characteristics of the film layers are investigated by focused ion beam-transmission electron microscopy (FIB-TEM) combined with an energy-dispersive X-ray elemental mapping (EDX-mapping) and line scan spectroscopy. The interfacial bonding strength between the Pt/oxide and Pt/metal thin films and quartz substrates is evaluated with an electronic universal testing machine.
SE analysis demonstrates that the Pt/oxide thin film system achieves exceptional thickness uniformity, with an average Pt layer thickness of 123.0 Å and a remarkably low non-uniformity of 1.6%. The Pt/metal system demonstrates a slightly higher average thickness of 155.0 Å, accompanied by a non-uniformity value of 4%. SEM characterization reveals that both Pt/oxide and Pt/metal thin films exhibit uniform nanoparticle distribution across their surfaces, without observable pore defects, confirming the defect-free morphology enabled by the ALD process. AFM further quantifies the surface roughness, showing values of 1.47 nm for the metal transition layer and 0.99 nm for the Pt/metal composite film. XPS analysis conclusively identifies that the ALD-synthesized Pt films are predominantly composed of metallic Pt in the zero-valent state, without detectable impurities or oxidized species. Structural characterization via XRD reveals a prominent Pt(111) diffraction peak at 2θ = 39.8°, confirming the face-centered cubic crystalline structure of the deposited Pt. FIB-TEM cross-sectional imaging, complemented by EDX-mapping, further corroborates the uniformity and density of both Pt/oxide and Pt/metal films. Critically, elemental line scans across the interfaces demonstrate mutual diffusion between Pt and constituent elements of the transition layers, indicative of robust interfacial interactions. Mechanical evaluation reveals significant enhancements in bonding performance: the oxide transition layer system achieves an interfacial bonding strength of 7.1 MPa, representing a 1.37-fold improvement over the non-transition-layer reference system (3.0 MPa). The Pt/metal system surpasses this performance, attaining a maximum bonding strength of 8.4 MPa.
By implementing ALD-engineered transition layers, this study successfully realizes the fabrication of Pt films with exceptional uniformity and robust interfacial adhesion on hemispherical resonators. The interdiffusion behavior between Pt and transition layer elements significantly enhances interfacial bonding strength. This methodology provides technical support for the precision manufacturing of highly reliable resonant devices, offering a scalable solution for next-generation inertial navigation systems.

Key words

hemispherical gyroscope harmonic oscillator / atomic layer deposition / Pt film / transition layer / uniformity / bonding strength

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GONG Ting, FENG Hao. Atomic Layer Deposition Technology for Surface Conductive Layers of Precision Resonant Devices[J]. Surface Technology. 2025, 54(12): 175-185 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.12.016

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