Preparation and Block Resistance Uniformity of ITO/SiO2 Films with Double Film Layer

ZHU Zhikun, CHEN Wanting, CHEN Jing, ZHU Changqing, LIU Yongmei

Surface Technology ›› 2024, Vol. 53 ›› Issue (24) : 188-196.

PDF(11737 KB)
PDF(11737 KB)
Surface Technology ›› 2024, Vol. 53 ›› Issue (24) : 188-196. DOI: 10.16490/j.cnki.issn.1001-3660.2024.24.017
Surface Functionalization

Preparation and Block Resistance Uniformity of ITO/SiO2 Films with Double Film Layer

  • ZHU Zhikun1, CHEN Wanting2, CHEN Jing2, LIU Yongmei2, ZHU Changqing3
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Abstract

According to the product design principle, the double film structure of SiO2/ITO films was designed and prepared. The preparation process is as follows:Si target (purity 99.85%) was used, and ITO target (purity 99.85%) was mixed with 90% indium oxide (In2O3) and 10% tin dioxide (SnO2). TN (Twist Nematic liquid crystal) sodium-calcium glass substrate was selected, size 16"×14"×1.1 mm, one side coating. Through magnetron sputtering and continuous coating magnetron sputtering, production line test equipment was used to carry out process design for TN series glass, requiring block resistance uniformity range of 70-90 Ω/sq., coating in a 10 000 clean workshop at control humidity of 30%-70%RH. The TN sodium-calcium glass substrate was placed on the frame, the height of the frame was approximately equal to the height of the coating equipment, and the frame was transported by the conveyor belt through the coating machine for coating. The first vacuum extraction treatment of the coating machine was carried out to ensure the stability of the atmosphere during the coating process, and then it was sent to the inlet chamber, transition chamber, variable speed chamber, and then the coating chamber for Si target and ITO target for coating. The deposited Si film was oxidized to form a SiO2 film, and after coating, it was sent to the variable speed chamber, transition chamber, and outlet chamber in turn to fill air for natural cooling to prevent the glass from being damaged due to the large pressure difference between inside and outside.

Key words

magnetron sputtering method; ITO/SiO2 double film layer; microstructure; uniformity of block resistance

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ZHU Zhikun, CHEN Wanting, CHEN Jing, ZHU Changqing, LIU Yongmei. Preparation and Block Resistance Uniformity of ITO/SiO2 Films with Double Film Layer[J]. Surface Technology. 2024, 53(24): 188-196
PDF(11737 KB)

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