HfO2-based high dielectric constant (high-k) materials have been successfully used as a ferroelectric or memristive material in nonvolatile memory devices and for novel neuromorphic computing concepts. Ferroelectric HfO2 thin film is demonstrated by incorporating various cation dopants into HfO2. Doped HfO2 thin film has been widely studied as the most promising candidate material for microelectronic devices in the last decade. Several methods have been reported for achieving ferroelectricity in HfO2, such as atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD). Compared with ALD and CVD, the Reactive magnetron sputtering method has a low pollution level due to the high purity of target material and has been well appreciated in the industry due to the high deposition rate of compounds. Doped HfO2 thin films have been prepared by RF reactive magnetron co-sputtering using Hf target and cation dopants target, However, uniformity of doping and thickness is limited to the size of the area oblique angle of two different targets. In this work, High quality Y-doped thin films have been deposited using a Y-doped hafnium cathode sputtering target several small pieces of Y metal were put evenly into the sputtering zone of the target surface.