GaN wafer is a chemically stable semiconductor material. Electrochemical action can effectively corrode the surface of GaN wafer. By choosing different electrochemical corrosion electrolyte solutions and different corrosion potentials, the electrochemical corrosion effect on the wafer surface can be regulated. In this paper, the friction and wear characteristics of electrochemically corroded GaN wafer surfaces were studied in order to better understand the material removal mechanism of electrochemical mechanical polishing on the surface of GaN wafers.