The work aims to prepare the TaC coating on the surface of graphite material with K2TaF7 and Ta powder as the main raw materials, which is of great value for reducing the preparation cost and improving the quality of third-generation semiconductors such as SiC, Gan, and AlN. TaC coating was synthesized on the surface of the graphite substrate by chemical reactions in molten salt at 1 200 ℃ for 3 h followed by high-temperature heat treatment of vacuum at 2 300 ℃ for 1 h. The phase composition and microstructure of the coating were characterized by XRD and SEM. The interface bonding strength between the TaC coating and the graphite substrate was measured by the pull-off method. The hardness and elastic modulus of the coating were characterized by nanoindentation. Finally, the corrosion resistance of the TaC coating was evaluated under simulated conditions and the TaC coated graphite was applied to the SiC crystal growth. The TaC coating prepared via molten salt method continuously covered the surface of the graphite and the surface morphology of the TaC coating was consistent with that of the original graphite substrate, with a bright yellow color. The phase composition of the coating was TaC and the thickness of the coating was about 20-40 μm. The TaC coating had a non-textured granular structure without preferred orientation growth. The interface bonding strength between the TaC coating and the graphite substrate was 9.49 MPa. The hardness and elastic modulus of the TaC coating were 14.42 GPa and 123.32 GPa, respectively. The mass loss rate was only 0.01 g/(m2.h) after the TaC coated graphite sample was kept at 2 300 ℃ for 3 h in SiC corrosion environment, which was much lower than that of uncoated graphite sample of 4.67 g/(m2.h) under the same test conditions. In the contact corrosion experiment with TaC coated graphite embedded by SiC powder at 2 300 ℃ argon for 3 h, the interface between SiC and TaC coating was clear and there was no mutual diffusion. After the TaC coated graphite was applied to the growth of SiC single crystal held at a temperature above 2 000 ℃ for more than 150 h, the overall morphology of the TaC coated graphite remained intact, and the edge corners of the TaC coated graphite peeled off. However, the TaC coating was still well combined with the graphite substrate elsewhere, and the mass loss rate of the TaC coated graphite was about 0.41 g/(m2.h), showing good corrosion resistance. The preparation process of TaC coating prepared on graphite surface by molten salt method is simple with low cost and high efficiency, and the TaC coating can be prepared on the surface of irregular components with complex shapes. The TaC coating grains are densely packed without preferential orientation, and the bonding strength with the graphite matrix is high, which can weaken the erosion of graphite substrate by aggressive gas in a corrosion environment. The TaC coated graphite prepared by molten salt method is expected to be applied in the preparation of the third generation semiconductor. This study provides a method for preparing TaC coating on not only the graphite substrate, but also other carbon materials.