Ultrasonic Assisted Transient Solid Phase Bonding Technology Based on Copper-indium Micro Nano Layer at Room Temperature

XIAO Jin, ZHAI Qian, ZHOU Yan-qiong, LI Wu-chu, CHEN Ji-song, WANG Chao-chao

Surface Technology ›› 2022, Vol. 51 ›› Issue (12) : 312-319.

PDF(8208 KB)
PDF(8208 KB)
Surface Technology ›› 2022, Vol. 51 ›› Issue (12) : 312-319. DOI: 10.16490/j.cnki.issn.1001-3660.2022.12.032

Ultrasonic Assisted Transient Solid Phase Bonding Technology Based on Copper-indium Micro Nano Layer at Room Temperature

  • XIAO Jin, ZHAI Qian, ZHOU Yan-qiong, LI Wu-chu, CHEN Ji-song, WANG Chao-chao
Author information +
History +

Abstract

High density three-dimensional lamination technology is the development trend of electronic packaging technology. With the thickness and spacing of chips becoming smaller and smaller, in order to solve the problem of high thermal stress caused by high temperature and aggravating signal delay in traditional reflow soldering process, the work aims to adopt the needle shaped copper-indium micro nano layer and ultrasonic assistance to realize bonding and interconnection at room temperature to ensure the reliability of interconnection. Ultrasonic assisted bonding technology refers to the bonding of metals on both sides under the action of ultrasonic and pressure, which can realize the low-temperature bonding between chips in a very short bonding time. The bonding pressure is small. Compared with the traditional hot pressing bonding, it reduces the damage of hot pressing to the chip and improves the reliability of the package.

Key words

metal material; solid phase bonding; Cu-In micro nano; bonding strength; diffusion

Cite this article

Download Citations
XIAO Jin, ZHAI Qian, ZHOU Yan-qiong, LI Wu-chu, CHEN Ji-song, WANG Chao-chao. Ultrasonic Assisted Transient Solid Phase Bonding Technology Based on Copper-indium Micro Nano Layer at Room Temperature[J]. Surface Technology. 2022, 51(12): 312-319
PDF(8208 KB)

Accesses

Citation

Detail

Sections
Recommended

/