This paper aims to improve the uniformity of element distribution at the TC4/GH4169 gradient transition interface, weaken the interface effect, and prepare a two-dimensional TC4/GH4169 gradient structure. Using laser additive manufacturing technology, the TC4/GH4169 one-dimensional gradient material is prepared by the gradient transition method of TC4-90wt.%TC4+10wt.%GH4169-GH4169, and the two-dimensional gradient structure is designed on the basis of the one-dimensional gradient to prepare TC4/GH4169 two-dimensional gradient material. The field emission scanning electron microscope is used to analyze the precipitates and the microstructure morphology of each gradient transition interface in the TC4/GH4169 gradient material, and the Energy Dispersive Spectrometer is used to analyze the element distribution at each gradient transition interface. The one-dimensional gradient 90wt.%TC4+10wt.%GH4169-GH4169 interface has a higher degree of interpenetration of materials than the TC4-90wt.%TC4+10wt.%GH4169 interface; due to the addition of Ni in TC4, more Ti2Ni precipitates with intersecting network distribution are formed in 90wt.%TC4+10wt.%GH4169; the degree of interface fluctuation and material interpenetration of the two-dimensional gradient sample in the horizontal direction is higher than that of the deposition direction. Among them, the two-dimensional gradient horizontal direction TC4-90wt.%TC4+10wt.%GH4169 interface is fully diffused on both sides of the interface. Compared with the one-dimensional gradient TC4-90wt.%TC4+ 10wt.%GH4169, the uniformity of element distribution at the interface is significantly improved. Appropriate gradient transition methods and two-dimensional gradient structure design can effectively improve the uniformity of element distribution at the transition interface of gradient materials, significantly weaken the interface effect, and have guiding significance for the preparation of gradient materials.