TiN films on Si substrate and 316L substrate were compared to study the effects of different substrate materials and initial curvature on the film stresses. TiN films were prepared on Si and 316L substrates by arc ion plating. The film stresses was measured. The microstructures of the films were analyzed by XRD, SEM and TEM. Based on the principle of structural mechanics, The finite element analysis technique was used to calculate and correct the stress on Si substrate and 316L substrate with different initial curvature. Under the same deposition process, the stress of TiN film on 316L substrate was larger than that on Si substrate. The film stresses increase with the increase of bias voltage. The columnar crystal structure was formed near the surface of the films. There were many semi-coherent growth structures at the interface between the 316L substrate and TiN film, while nanocrystalline mixing was the main bonding at the interface of the Si substrate and TiN film. The initial radius of curvature of the substrate would cause some errors during film stress testing. The smaller the initial radius was, the greater the errors would be caused. Under the effect of bias, the films on 316L substrate would induce more compressive stress. The bond between 316L and TiN film was better, which was beneficial to bear higher film stresses. The initial radius of curvature of the 316L substrate was significantly smaller than that of the Si substrate, which caused a large error during film stress testing. It is necessary to be corrected for the stress of the films on the 316L substrate.