The work aims to investigate the effect of process parameters on the material removal rate and surface morphology of single crystal gallium oxide (100) in semi-consolidated grinding process. The effect law of grinding process parameters such as abrasive particle size, grinding pressure and grinding disk speed on material removal rate (MRR) and surface roughness (Ra) of gallium oxide wafer was studied by single factor test, and the process parameters were optimized by orthogonal test. According to the test results, the MRR and Ra gradually increased with the increase of abrasive particle size. With the increase of grinding pressure, the MRR increased gradually and the Ra gradually slowed down. With the increase of grinding disk speed, the MRR increased gradually and the Ra had little change. Finally, the process parameters were optimized by orthogonal test. The optimized process combination was as follows:the abrasive particle size on the grinding pad was 3 μm, the grinding pressure was 2940 Pa and the grinding disk speed was 60 r/min. After grinding, the Ra of gallium oxide was 26 nm, and the MRR was 3.786 nm/min. The semi-consolidated grinding process can suppress the cleavage phenomenon, and the surface roughness can be stably and effectively reduced by the appropriate semi-consolidated grinding process parameters, so as to obtain a better surface of gallium oxide, and provide a technical basis for the subsequent precision polishing process.