The purpose of this work is to prepare nano-inverted pyramid structure with low reflectivity on the n-type monocrystalline silicon surface under mild reaction rate and to investigate the effect of H2O2 concentration on the deposition and etching behavior of nano-Cu particles. The surface weaving of diamond wire cut n-type single crystal silicon was performed by using copper nanoparticle catalytic etching method. The scanning electron microscope was used to observe the micro- morphology of flocking silicon wafer after texturing. The reflectance of silicon wafer surface was calculated by UV-Vis spectrophotometer, the relationship between copper-catalyzed etching morphology and etching rate with temperature and H2O2 concentration was analyzed, and the mechanism of inverted pyramid formation during copper-catalyzed etching and the influence of H2O2 concentration on the etching morphology of silicon wafer surface were discussed. The result shows that the concentration of hydrogen peroxide controls the deposition-oxidation balance of copper nanoparticles the silicon surface to influence the deposition status of copper particles, and ultimately affects the silicon etching process. With the addition of H2O2, the etching rate is first raised and then lowered and finally leveled off, while the etching process may lead to four stages of structural evolution. H2O2 plays an important role in the process of copper assisted chemical etching. The deposition-oxidation balance of copper particles can be controlled by adjusting the concentration of H2O2, and the inverted pyramid structure with uniform morphology and low reflectivity can be formed on the surface of silicon wafer. Uniform inverted pyramid structure is prepared on diamond wire sawed n-type silicon wafers under 40 ℃ with H2O2 concentration of 1.6 mol/L. The surface reflectivity is reduced to 6.4%, and the reaction rate was mild (0.23 μm/min), and the wafer thinning was low (3.5 μm).