As an important method for preparing surface protective films, physical vapor deposition is always the research focus in the field of surface films. Plasma in physical vapor deposition is a key factor that directly affects the performance of films. The characterization of its parameters has important guiding significance for optimizing the deposition process and improving the performance of films. The paper summaries the common physical vapor deposition methods and their development, including the principle and development process of arc ion plating, magnetron sputtering and arc magnetic control composite technology and generalizes the commonly used characterization methods of plasma parameters in current production, including Langmuir probe method, Thomson scattering method, microwave interference method and emission spectrum method, of which the principle for diagnosing plasma parameters is expounded and the advantages and disadvantages and the main problems are analyzed. The development and current situation of plasma parameter characterization in common physical vapor deposition are summarized, and the development and recent research of plasma parameter diagnosis in arc ion plating and magnetron sputtering are sorted out. Langmuir probe method and the emission spectrum method are the most commonly used methods for plasma parameter characterization of physical vapor deposition. Early studies focused on exploring the relationship between plasma transient parameters and the structural properties of thin films.. With the progress of modern technology, the early diagnosis methods are constantly integrated with new technologies, and the research direction is also gradually inclined to study the time variation of plasma parameters and optimizes thin-film processing and performance evaluation methods. Finally, the paper analyzes problems and shortcomings of plasma parameters characterization in physical vapor deposition and prospects the future research trend of plasma parameters.