The work aims to improve the electrical properties of embedded thin film resistor (ETFR) materials, so that they can have larger square resistance value and resistivity as well as smaller resistance temperature coefficient. C/N co-doped NiCr alloy ETFR materials were prepared by reactive closed-field unbalanced magnetron sputtering. With the optimized sputtering parameters obtained in previous experiments as the basic experimental conditions, C and N co-doped NiCr alloy ETFR materials at different nitrogen flow rate were respectively deposited on copper foil substrates and glass slides substrates by changing the nitrogen flow rate. The surface morphology of film was examined by SEM and white light interferometer; the microstructure of film was characterized by XRD; the composition of film was investigated by XPS and EDS; the thickness of film was determined by calibrated surface profiler; the carbon in film was analyzed by Raman spectroscopy; and the sheet resistance and thermal stability of the ETFR were measured by Four-Probe Measuring System. The diffraction peaks and the amorphous ingredient of thin films respectively decreased and increased with the increasing of nitrogen flow rate. When the nitrogen flow rate was 15 mL/min, the thin film could obtain small resistance temperature coefficient and large resistivity. The TCR of thin film was in the range of 0￡TCRNiCrCN￡1.663′10-4 K-1 and the resistivity of thin films was 2.2970×10-3 Ω×cm. The intermediate phases Cr2N and CNs produced during reactive sputtering have effect on the resistivity and sheet resistance of thin film. The electrical properties of the C and N co-doped NiCr alloy ETFR materials are better than those of NiCr alloy ETFR materials and C-doped NiCr alloy ETFR materials.