The work aims to study the effect of sputtering power on the hardness and electrical resistivity of CoCrFeNi high entropy alloy films, so as to obtain high-entropy alloy films with high hardness and electrical resistivity and provide experimental basis for their application in the field of resistive thin films. Under different sputtering power (40, 60, 80, 100 W), CoCr alloy, Ni and Fe sheet were used to manufacture the splicing alloy target and the CoCrFeNi high entropy alloy films were deposited on silicon substrates by magnetron sputtering. The phase structure, composition and morphology of the films were analyzed by XRD and SEM, respectively. The microhardness tester was used to measure the film hardness. The electrical resistivity of the films was measured by four-point probe method. CoCrFeNi films prepared at different sputtering power had good bonding with the substrate and presented columnar growth pattern, and appropriate sputtering power was helpful to obtain high-entropy alloy films with equal molar ratio. As the sputtering power increased from 40 W to 100 W, the crystallinity of the films was improved, and simple FCC phase was formed. The preferred growth of (111) and columnar growth became more obvious too. With increased sputtering power, the grain size increased, and the hardness and resistivity decreased. Obviously, the sputtering power has an important effect on the structure and properties of CoCrFeNi films. When the sputtering power is 40 W, the CoCrFeNi film has the highest hardness and electrical resistivity, which are 940.5HV and 336.5 μΩ?cm, respectively.