Chemical mechanical polishing (CMP) is an important means to achieve global smoothing in integrated circuit manufacturing. CMP slurry is one of the key factors affecting polishing quality and efficiency, while abrasive particles and oxi-dizers are the key factors determining the performance of CMP slurry. The CMP abrasives were divided into single abrasives, mixed abrasives and composite abrasives. The development status and application of CMP abrasives at local and international levels in recent years were summarized, including three kinds of single abrasives SiO2, Al2O3 and CeO2, mixed abrasives SiO2/ Al2O3, SiO2/SiO2 and SiO2/CeO2, core-shell structure composite particles CeO2@SiO2, PS@CeO2, PS@SiO2, sSiO2@mSiO2, PMMA@CeO2 and PS@mSiO2, and ion-doped composite abrasives Co, Cu, Fe, Ce, La, Zn, Mg, Ti and Nd and the existing problems were also analyzed in detail. The selection and use of KMnO4 and H2O2 oxidizers (KMnO4 and H2O2) for CMP slurry were briefly summarized. In addition, the research and application of a new type of green environmental polishing fluid are in-troduced, the common problems in CMP slurry are summarized and the future research directions of CMP slurry are anticipated.