Graphene is an ideal substitute for silicon material due to many outstanding properties and can change people’s life completely and lead a new revolution in science and technology. However, MLG is a semi-metal with zero band- gap, which limits the applications in semiconductor applications. Bilayer graphene with Bernal-stacking can open a band-gap by vertical electrical field, which can be used in the field of semiconductor electronic devices and also can greatly reduce the sheet resistance. There are many methods to prepare bilayer graphene, but due to the consideration of cost, quality and scalability of BLG, chemical vapor deposition is the most important method to prepare numerous high-quality BLG. A series of work related to preparation of BLG by CVD was reviewed. The growth mechanism of BLG was firstly introduced and the nucleation and growth on Ni, Cu, and Cu-Ni alloy were explained according to type of catalyst. Then, the uniformity, domain size and stacking order of BLG were studied from the aspects of carbon sources, growth atmosphere, catalysts and structures. Finally, the above work of synthesizing BLG by chemical vapor deposition is summarized, and the outlook for future research is given.