The work aims to acquire vanadium oxides thin films of excellent electrical properties by adopting vacuum coating process. Composition of the films was controlled in the method of DC reactive magnetron sputtering by changing some experimental conditions of coating including oxygen content, substrate temperature and substrate material. Thickness, crystal structures and electricity properties of the coated films were studied by ellipsometer, X-ray diffractometer (XRD), and four-probe conductivity meter. The vanadium oxides thin films obtained by reactive sputtering had high temperature sensibility as oxgen content in coating chamber ranged from 40% to 50%. In addition, benefiting from similar lattice parameters of Al2O3 (on 0001 crystal face) substrate and VO2 films, there was an order of magnitude of linear variation in resistance of the thin films deposited on Al2O3 substrate at 30~100 ℃. Optimal scope of coating condition for vanadium oxides is determined, and it is found that Al2O3 substrate is more suitable for epitaxial growth of VO2 films than that of silicon and glass. The samples obtained in this method have excellent electrical properties and can be applied to such research fields as thermistor.