The work aims to effectively lower the secondary electron yield (SEY) on silver plated surfaces of aluminum alloy of space high power microwave components and improve the corresponding multipactor threshold value. Two roughening methods were studied for surface of silver electroplated plate specimen on aluminum substrate: Micrographic lithography method and direct wet chemical etching method. Scanning electron microscope and laser scanning microscope were adopted to characterize the rough morphology of porous plate specimen through two surface treatment methods. The current method was utilized to test and analyze the SEY characteristics. The obtained surface of regular array round hole, high aspect ratio and randomly distributed rough surfaces could lower SEY on plated silver surface obviously, and the repeatability of process was good. Compared with the smooth silver surface, the round hole array specimen with the best inhibition effects could reduce the maximum value of SEY from 2.2 to 1.3 and increase E1 from 50 eV to 100 eV. The randomly etched structure could decrease the maximum value of SEY on smooth silver surface from 2.2 to 1.1 and improve E1 to 300 eV. The theory of secondary electron trap effects on surfaces of two typical specimens was analyzed based on Monte-Carlo simulation. The simulation rules of surface SEY characteristics were in consistent with the test data. Both micro morphology of silver plated surface prepared by photoetching and wet chemical etching processes can lower SEY on silver plated surface and the roughening treatment of silver plated surface can effectively improve the reliability of micro discharge of satellite power microwave components and avoid increasing the insertion loss.