Bismuth ferrite is the most important single-phase multiferroic material at room temperature. Because of its small band gap, high remnant polarization and curie temperature, bismuth ferrite is widely used in such fields as ferroelectric random access memory and optoelectronic devices. However, strong leakage current will be produced in bismuth ferrite films due to volatilization of Bi3+ and partial reduction of Fe3+ in preparation process, which restricts its practical application. Doping is an effective method of improving electrical properties of bismuth ferrite films. Centering on the process of reducing volatilization of Bi3+ and inhibiting reduction of Fe3+ by doping at A-B site, recent studies on doping modification of the electrical properties at home abroad were reviewed by analyzing defect reactions and microstructure changes after doping. The modification research progress in effects of lanthanide and alkali metal ions at A-site, transition metal ions at B-site and co-doping at A-B sites on microstructure, leakage current and ferroelectricity was expounded. The modification effects were compared. Moreover, modification mechanism was explained in detail from the aspect of defect reactions, crystal structure and surface morphology. Finally, some urgent questions to be solved were put forward.