The work aims to expand forbidden bandwidth and improve performance of CdO film by doping ZnO to it without affecting its electrical property. A series of Cd1-xZnxO transparent conductive films were deposited on glass substrate and silicon <111> substrate by adopting RF magnetron sputtering. Structure, optical and electrical properties of the films were tested by using XRD, UV spectrophotometer and Hall effect measuring instrument. The structure of films turned to 3 phases as the Zn doping content increased: RS (rock salt) phase if x<0.25, mixed phase if 0.25<0.5, and WZ (wurtzite) phase if 0.5<1. After Zn doping, the absorption edge of the films could be increased to nearly 3 eV, and resistivity was 6.69×10-4 cm, carrier concentration was about 7.92×1020 cm-3, which was similar to electrical properties of CdO film. CdO film doped with a certain amount of ZnO can improve forbidden bandwidth without affecting its electrical properties, so that the film has good photoelectric properties.