The work aims to investigate the active particles distribution characteristics and radiative transition processes of near-substrate plasma region in large scale planar HiPIMS process for chromium target, so as to provide experimental basis and theoretical foundation for large-scale application of HiPIMS. Key deposition parameters including different pulse voltage, working air pressure and superimposed DC current in HiPIMS processes were selected. Plasma emission spectroscopy was utilized to measure optimal emission spectrum in near-substrate plasma region to analyze category of atomic characteristic spectral line, intensity distribution, ion line intensity percentage, metal atomic spectral line content, etc. The metal ionization rate in near-substrate plasma region increased significantly after the pulsed voltage exceeded 700 V; increasing working pressure to 5.0 mTorr at the pulsed voltage of 600 V could effectively improve content of excited state Cr particles arriving at the substrate. However, the increase of working air pressure would reduce the ionization rate of metal. The increase of superimposed DC current could decrease content of activated Cr+ and Cr* arriving at the substrate to a certain degree. The superimposed DC currentshould be below 1.0 A to maintain certain proportion of activated particles. The activated particles in near-substrate plasma region in HiPIMS are mainly excited Ar+ and Cr* atoms, leading collision processes are ionization recombination of Ar+ atoms and de-excitation of Cr* atoms. Metal ionization rate shall be improved.