The work aims to solve the RC delay, signal crosstalk, power consumption, noise and other issues caused by the high integration of super-large scale integrated circuits and prepare polyimide/fluorinated ?lms of low dielectric constant. Fluorinated graphene solution and polyamide acid solution were prepared by simple sonochemical exfoliation method and two-step method. The PI/FG composite films were prepared by solution blending method, while microstructure and dielectric properties of FG, PI and PI/FG composite films were characterized by transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and precision impedance analyzer. The polyimide/fluorinated films were successfully prepared and the dielectric constant of composite film decreased from 3.63 to 2.52. The polyimide/fluorinated grapheme composite films of low dielectric constant are successfully prepared.